SSE110N03-03P 110a , 30v , r ds(on) 2.5m ? n-channel enhancement mode mosfet elektronische bauelemente 10-nov-2011 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen and lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipati on. features low r ds(on) provides higher efficiency and extends battery life. low thermal impedance copper leadframe to-220p saves board space. fast switching speed. high performance trench technology. application dc-dc converters and power management in portable and battery-powered products such as computers, pri nters, pcmcia cards, cellular and cordless telephones. absolute maximum ratings (t a =25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current 1 t c = 25 c i d 110 a pulsed drain current 2 i dm 390 a continuous source current (diode conduction) 1 i s 110 a power dissipation 1 t c = 25 c p d 300 w operating junction and storage temperature range t j , t stg -55~175 c thermal resistance rating maximum junction to ambient 1 r ja 62.5 c / w maximum junction to case r jc 0.5 notes 1. package limited. 2. pulse width limited by maximum junction tempera ture. g 1 s 3 d 2 ref. millimeter ref. millimeter min. max. min. max. a 7.90 8.10 n 0.75 0.95 b 9.45 9.65 o 0.66 0.86 c 9.87 10.4 7 p 13.50 14.50 d - 11.50 q 2.44 3.44 e 1.06 1.46 r 3.50 3.70 f 2.60 3.00 s 1.15 1.45 g 6.30 6.70 t 4.30 4.70 h 8.35 8.75 u - 2.7 j 1.60 typ. v 1.89 3.09 k 1.10 1.30 w 0.40 0.60 l 1.17 1.37 x 2.60 3.60 m - 1.50 to-220p i f m q q u v b r t s p x k 2 3 1 c a d e g h j l n o w
SSE110N03-03P 110a , 30v , r ds(on) 2.5m ? n-channel enhancement mode mosfet elektronische bauelemente 10-nov-2011 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static gate-threshold voltage v gs(th) 1 - - v v ds =v gs , i d =250 a gate-body leakage i gss - - 100 na v ds =0, v gs =20v zero gate voltage drain current i dss - - 1 a v ds =24v, v gs =0 - - 25 v ds =24v, v gs =0, t j =55 c on-state drain current 1 i d(on) 120 - - a v ds =5v, v gs =10v drain-source on-resistance 1 r ds(on) - - 2.5 m v gs =10v, i d =30a - - 4 v gs =4.5v, i d =20a forward transconductance 1 g fs - 30 - s v ds =15v, i d =30a diode forward voltage v sd - 1.1 - v i s =34a, v gs =0 dynamic 2 total gate charge q g - 70 - nc v ds =15v, v gs =4.5v, i d =90a gate-source charge q gs - 16 - gate-drain charge q gd - 30 - turn-on delay time t d(on) - 16 - ns v dd =25v, v gen =10v, r l =25 , i d =34a rise time t r - 27 - turn-off delay time t d(off) - 240 - fall time t f - 80 - notes: 1 pulse test pw Q 300 s duty cycle Q 2%. 2 guaranteed by design, not subject to production t esting.
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